| PART |
Description |
Maker |
| E0C63P366 |
CMOS 4-Bit Low Voltage Singl Single Chip Microcomputer Composed of 4-Bit E0C63000 Core CPU，RAM,Rewritable ROM，Segment LCD Driver,On-Board Writing
|
爱普生（中国）有限公
|
| MBM29LV651UE12TR MBM29LV651UE90TR MBM29LV651UE-12 |
64M (4M x 16) BIT 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
64M (4M x 16) BIT 64M号（4米16）位
AGM3224D equivalent, 320 x 240 pixel format 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
DC-DC Converter; Supply Voltage:12V; Output Voltage:3.3V; Number of Outputs:1; Power Rating:20W; Mounting Type:PC Board; Series:WPN20R
320 x 240 pixel format, LED or CFL Backlight
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
Fujitsu Component Limit...
|
| MX23C6410 23C6410 |
64M-BIT Mask ROM (8/16 Bit Output)
From old datasheet system
|
Macronix 旺宏
|
| M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP |
From old datasheet system
4-BANK x 2097152-WORD x 8-BIT
64M bit Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| K9K1208Q0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
| K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
|
| MC-4R64CPE6C-653 MC-4R64CPE6C-745 MC-4R64CPE6C MC- |
Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 16-BIT)
Direct Rambus?/a> DRAM RIMM?/a> Module 64M-BYTE (32M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 64M-BYTE (32M-WORD x 16-BIT)
|
http://
Elpida Memory
|
| UPD4664312F9-BE75X-CR2 UPD4664312F9-B65X-CR2 UPD46 |
64M-bit(4M-word x 16-bit)MOBILE SPECIFIED RAM
|
NEC
|
| K847PH K827P8 K827PH K817P K817P1 K817P2 K817P3 K8 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
From old datasheet system
Optocoupler with Phototransistor Output
XTAL MTL T/H HC49/U
|
Samsung Electronic
TFUNK
Vishay Telefunken
Vishay Intertechnology,Inc.
|
| MBM29LV652UE-90 MBM29LV652UE-12 MBM29LV652UE |
64M (4M X 16) BIT
|
Fujitsu Component Limit...
Fujitsu Limited
Fujitsu Component Limited.
|
